1 DescriptionThese N-channel enhancement mode power MOSFETSUsed advanced trench technology design, providedexcellent RDSON and low gate charge. Which accords withthe RoHS standard.2 Features● Low On Resistance● Low Gate Charge● High avalanche Current● Fast Switching● Low Reverse Transfer Capacitances● 100% Single Pulse Avalanche Energy Test● 100% ΔVDS Test3 Applications● Power switching applications● DC-DC converters● UPS power supply