Mosfets

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Incepted in the year 1990, Cirkit Electro Components Private Limited is an eminent entity indulged in wholesaling, trading , distributing, exporting and importing  a huge compilation of IGBT Module, Bridge Rectifier, Electric Transistors, Integrated Circuit, Triac Module, Piezoelectric Film, LED Products and many more. Manufactured making use of supreme in class material and progressive tools and technology at our vendor’s end, these are in conformism with the standards defined by the market. Along with this, these are tested on a set of norms prior final delivery of the order.


With a motive to stand high on the visions of our patrons, we are indulged in providing a huge array of products to our patrons, which are in tandem with the comprehensively accredited standards of quality. Along with this, all our departments are managed by their respective executives to ensure that all the responsibilities are getting finished effectively within the assured time. Since our inception, we are working beneath the supervision of Mr. Gulabchand Hariya (Director). His enormous knowledge and information in this domain have directed us in becoming one of the well-known suppliers of the industry.

Additional Information:

• Production Capacity: As per requirement
• Delivery Time: Ready stock
• Packaging Details: Standard

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Incepted in the year 1990, Cirkit Electro Components Private Limited is an eminent entity indulged in wholesaling, trading , distributing, exporting and importing  a huge compilation of IGBT Module, Bridge Rectifier, Electric Transistors, Integrated Circuit, Triac Module, Piezoelectric Film, LED Products and many more. Manufactured making use of supreme in class material and progressive tools and technology at our vendor’s end, these are in conformism with the standards defined by the market. Along with this, these are tested on a set of norms prior final delivery of the order.


With a motive to stand high on the visions of our patrons, we are indulged in providing a huge array of products to our patrons, which are in tandem with the comprehensively accredited standards of quality. Along with this, all our departments are managed by their respective executives to ensure that all the responsibilities are getting finished effectively within the assured time. Since our inception, we are working beneath the supervision of Mr. Gulabchand Hariya (Director). His enormous knowledge and information in this domain have directed us in becoming one of the well-known suppliers of the industry.

Additional Information:

• Production Capacity: As per requirement
• Delivery Time: Ready stock
• Packaging Details: Standard

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2N3055 is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor’s terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.

Features:

• Metal TO-3 case
• Advanced process technology
• Low error voltage
• Fast switching speed
• Full-voltage operation
• High power and current handling capability

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MOSFET

Product Details:

Incepted in the year 1990, Cirkit Electro Components Private Limited is an eminent entity indulged in wholesaling, trading , distributing, exporting and importing  a huge compilation of IGBT Module, Bridge Rectifier, Electric Transistors, Integrated Circuit, Triac Module, Piezoelectric Film, LED Products and many more. Manufactured making use of supreme in class material and progressive tools and technology at our vendor’s end, these are in conformism with the standards defined by the market. Along with this, these are tested on a set of norms prior final delivery of the order.


With a motive to stand high on the visions of our patrons, we are indulged in providing a huge array of products to our patrons, which are in tandem with the comprehensively accredited standards of quality. Along with this, all our departments are managed by their respective executives to ensure that all the responsibilities are getting finished effectively within the assured time. Since our inception, we are working beneath the supervision of Mr. Gulabchand Hariya (Director). His enormous knowledge and information in this domain have directed us in becoming one of the well-known suppliers of the industry.

Additional Information:

• Production Capacity: As per requirement
• Delivery Time: Ready stock
• Packaging Details: Standard

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N-Channel MOSFET Transistor ·FEATU RES ·Drain Current –ID= 9.5A@ TCAA=25 ·Drain Source Voltage- : VDSS= 600V (Min) ·Static Drain-Source On-Resistan ce : RDS(on) = 0.73Ω(Max) ·Minimum Lo t-to-Lot variations for robust device p erformance and reliable operation ·DE SCRITION ·Designed for high efficiency switch mode power supply.·ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARA METER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Volta ge-Continuous ±30 V ID Drain Curre nt-Continuous 9.5 A IDM Drain Curre nt-Single Plused 38 A PD Total Diss ipation @TC=25 156 W Tj M .

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• Delivery Time: 1-5 DAYS

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The F12N60 is a high voltage power MOSFET combinesadvanced trench MOSFET designed to have better characteristics,such as fast switching time, low gate charge, low on-stateresistance and high rugged avalanche characteristics. This powerMOSFET is usually used in high speed switching applications ofswitching power supplies and adaptors.

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The is a general purpose voltage controlled oscillator which may be used to generate square and triangular waves the frequency of which is a very linear function of a control voltage The frequency is also a function of an external resistor and capacitor The LM566CN is specified for operation over the 70 C temperature range

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60V N-CHANNEL POWER MOSFET Power MOS FET DESCRIPTION The UTC 60N06 is N -channel enhancement mode power field e ffect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used a t telecom and computer application. FEATURES * RDS(ON) ≤ 18mΩ @ VGS=10V , ID=30A * Ultra low gate charge ( typi cal 39nC) * Fast switching capability * Low reverse transfer Capacitance (CRSS = typical 115pF) * Avalanche energy Spe cified * Improved dv/dt capability, hig h ruggedness SYMBOL 2.Drain 1 TO-2 20 1 TO-220F 1 TO-220 .

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VCES Low VCE(sat) IGBT High Speed IGBT I XSH/IXSM 40 N60 IXSH/IXSM 40 N60A 600 V 600 V I C25 75 A 75 A VCE(sat) 2.5 V 3.0 V Short Circuit SOA Capability S ymbol V CES V CGR V GES V GEM I C25 I C 90 I CM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150° C ; RGE = 1 M Continuous Transient T C = 25°C T C = 90°C T C = 25°C, 1 ms V GE = 15 V, TJ = 125°C, RG = 2.

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• Low gate charge (typical 15 nC)• Low Crss (typical 6.5 pF)• Fast switching• 100% avalanche tested • Improved dvidit capability

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9N90 9A, 900V N-CHANNEL POWER MOSFET DESCRI PTION The UTC 9N90 uses UTC’s advance d proprietary, planar stripe, DMOS tech nology to provide excellent RDS(ON), lo w gate charge and operation with low ga te voltages.This device is suitable fo r use as a load switch or in PWM applic ations. FEATURES * RDS(ON) ≤ 1.2 @ VGS=10V, ID=4.5A * Ultra Low Gate Charge (Typical 45 nC) * Low Reverse T ransfer Capacitance (CRSS = Typical 14 pF) * Fast Switching Capability * Avala nche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL 2.Drain Power MOSFET 1 .

Additional Information:

• Delivery Time: 1-5 DAYS

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The F12N65 is a high voltage power MOSFET combines advanced trench MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors.

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• Delivery Time: 1-5DAYS

Product Details:

• Drain Current-lo=23A@ Tc=25°C•Drain Source Voltage- : Voes=500V(Min)• Static Drain-Source On-Resistance: Rosion)=0.245 (Max)• 100% avalanche tested

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• Delivery Time: 2-5 DAYS

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N-Channel MOSFET Transistor INCHANG E Semiconductor 80N06 ·DESCRIPTION · Drain Current ID= 80A@ TC=25 ·Drain Source Voltage- : VDSS= 60V(Min) ·Fas t Switching Speed ·100% avalanche test ed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·General pur pose power amplifier ·ABSOLUTE MAXIMU M RATINGS(TC=25) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltag e (VGS=0) 60 V VGS Gate-Source Volt age ±30 V ID Drain Current-continu ous@ TC=25 80 A ID(puls) Pulse D rain Current 320 A Ptot Total Dissi pation@TC=25 150 W Tj Max .

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• Delivery Time: 2-15 DAYS

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10N65 10A , 650V N-CHANNEL POWER MOSFET DESCR IPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such a s fast switching time, low gate charge, low on-state resistance and a high rug ged avalanche characteristics.This pow er MOSFET is usually used at high speed switching applications in power suppli es, PWM motor controls, high efficient DC to DC converters and bridge circuits . FEATURES * RDS(ON) < 0.86@VGS =10V * Low gate charge ( typical 44 nC) * Low Crss ( typical 18 pF) * Fast swi tching * 100% avalan .

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• Delivery Time: 1-5 DAYS

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Output current to 0.5 AOutput voltages of 5; 6; 8; 9; 10; 12; 15; 24 VThermal overload protectionTO-220Short circuit protection Output transition SOA protectionTO-220FPOutput voltage tolerance: 2 % (AB and AC versions) or 4 % (C version) Guaranteed in extended temperature range

Additional Information:

• Delivery Time: 2-15DAYS

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Owing to the team of professionals whom we hired at our company premises, we are engaged in delivering with IGBT Module, Bridge Rectifier, Electric Transistors, Integrated Circuit, Triac Module, Piezoelectric Film, LED Products and many more.

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XBLW 4-Channel Buffer/Line Driver with Tri-state Output, Operating Voltage (Vcc) (v) 2-6VQuiescent Current Iq(Typ)8uA

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XBLW Four signal channels with two-Input XOR GatesOperating Voltage?Vcc?(v)2-6V,Quiescent Current Iq(Typ)2uA

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XBLW Eight D-Type Edge-Triggered Flip-Flops,Operating Voltage?Vcc?(v)2-6V,Quiescent Current Iq(Typ)8uA

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XBLW Eight D-Type Edge-Triggered Flip-Flops,Operating Voltage?Vcc?(v)2-6V,Quiescent Current Iq(Typ)8uA

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XBLW 4-Channel Buffer/Line Driver with Tri-state Output, Operating Voltage (Vcc) (v) 2-6VQuiescent Current Iq(Typ)8uA

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XBLW four signal channelsTwo-Input OR Gate ,Operating Voltage?Vcc?(v)2-6V,Quiescent Current Iq(Typ)2uA

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XBLW Type:N-Channel Drain-Source Voltage(Vdss): 40V Continuous Drain Current(Id): 60A

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SGT MOS 40V 120A Lithium battery protection/High Frequency DC-DC/Electric tool

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SGT MOS 70V 130A 48V 6/12 tube electric vehicle controller, etc

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SGT MOS 100V 180A Motor drive/Microinverter/Energy storage/

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SGT MOS 100V 60A DC-DC/Converter

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Trench MOS 30V 60A Load switch

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Trench MOS 40V 96A Lithium battery protection board/Electric tools

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Trench MOS 68V 65A LED power supply/Motor control

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Trench MOS 68V 33A Power management application

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Trench MOS 100V 68A Logistics motor

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XBLW Type: P-Channel Drain-Source Voltage(Vdss): 30V Continuous Drain Current(Id): 9A

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XBLW Dual-channel voltage comparator?Operating Voltage2-36V,Quiescent Current 0.4mA,Offset Voltage1mV

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XBLW Type: P-Channel Drain-Source Voltage(Vdss): 30V Continuous Drain Current(Id): 9A

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SGT MOS 40V 180A Lithium Battery Protection Board/Electric tool

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SGT MOS 85V 100A 60V/70V6/12 tube electric vehicle controller, etc

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XBLW Dual 2-to-4 Line Decoder,Operating Voltage?Vcc?(v)2-6V,Quiescent Current Iq(Typ)8uA