Mosfets Transisters

Product Details:

Owing to the team of professionals whom we hired at our company premises, we are engaged in delivering with IGBT Module, Bridge Rectifier, Electric Transistors, Integrated Circuit, Triac Module, Piezoelectric Film, LED Products and many more.

Product Details:

Owing to the team of professionals whom we hired at our company premises, we are engaged in delivering with IGBT Module, Bridge Rectifier, Electric Transistors, Integrated Circuit, Triac Module, Piezoelectric Film, LED Products and many more.

Product Details:

Owing to the team of professionals whom we hired at our company premises, we are engaged in delivering with IGBT Module, Bridge Rectifier, Electric Transistors, Integrated Circuit, Triac Module, Piezoelectric Film, LED Products and many more.

Product Details:

Incepted in the year 1990, Cirkit Electro Components Private Limited is an eminent entity indulged in wholesaling, trading , distributing, exporting and importing  a huge compilation of IGBT Module, Bridge Rectifier, Electric Transistors, Integrated Circuit, Triac Module, Piezoelectric Film, LED Products and many more. Manufactured making use of supreme in class material and progressive tools and technology at our vendor’s end, these are in conformism with the standards defined by the market. Along with this, these are tested on a set of norms prior final delivery of the order.


With a motive to stand high on the visions of our patrons, we are indulged in providing a huge array of products to our patrons, which are in tandem with the comprehensively accredited standards of quality. Along with this, all our departments are managed by their respective executives to ensure that all the responsibilities are getting finished effectively within the assured time. Since our inception, we are working beneath the supervision of Mr. Gulabchand Hariya (Director). His enormous knowledge and information in this domain have directed us in becoming one of the well-known suppliers of the industry.

Additional Information:

• Production Capacity: As per requirement
• Delivery Time: Ready stock
• Packaging Details: Standard

Product Details:

 Quad 2-Input NOR Buffe red B Series Gate CD4011BM CD4011BC Qua d 2-Input NAND Buffered B Series Gate March 1988 CD4001BM CD4001BC Quad 2-In put NOR Buffered B Series Gate CD4011BM CD4011BC Quad 2-Input NAND Buffered B Series Gate General Description These q uad gates are monolithic complementary MOS (CMOS) integrated circuits construc ted with N- and P-channel enhancement m ode transistors 

Additional Information:

• Delivery Time: 2-25 DAYS

Product Details:

Owing to the team of professionals whom we hired at our company premises, we are engaged in delivering with IGBT Module, Bridge Rectifier, Electric Transistors, Integrated Circuit, Triac Module, Piezoelectric Film, LED Products and many more.

Product Details:

 High Speed Power S witching, Logic Level Enhanced Aval anche Ruggedness 100% UIS Tested, 1 00% Rg Tested Lead Free, Halogen Fr ee P-1 30V N-Ch Power MOSFET VDS RDS (on),typ VGS=10V ID (Sillicon Limited) 30 V 2.5 m 75 A Application Ha rd Switching and High Speed Circuit DC/DC in Telecoms and Inductrial DFN5 x6 Drain Gate Part Number HTN030N03 Package Marking DFN5x6 TN030N03 Absolu te Maximum Ratings at Tj=25 (unless otherwise specified) Parameter Symbol Conditions Continuous Drain Current (Silicon Limited) Drain to Source Volta ge Gate to Source Voltage Puls .

Product Details:

Mosfet N-CH 650V 11A O220F

Product Details:

N-Channel MOSFET Transistor ·FEATU RES ·Drain Current –ID= 9.5A@ TCAA=25 ·Drain Source Voltage- : VDSS= 600V (Min) ·Static Drain-Source On-Resistan ce : RDS(on) = 0.73Ω(Max) ·Minimum Lo t-to-Lot variations for robust device p erformance and reliable operation ·DE SCRITION ·Designed for high efficiency switch mode power supply.·ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARA METER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Volta ge-Continuous ±30 V ID Drain Curre nt-Continuous 9.5 A IDM Drain Curre nt-Single Plused 38 A PD Total Diss ipation @TC=25 156 W Tj M .

Additional Information:

• Delivery Time: 2-5 DAYS

Product Details:

dual D flip-flop is a monolithic compl ementary MOS (CMOS) integrated circuit constructed with N- and P-channel enhan cement mode transistors Each flip-flop has independent data set reset and cloc k inputs and ‘‘Q’’ and ‘‘Q� ��’ outputs These devices can be used for shift register applications and by connecting ‘‘Q’’ output to the data input for counter and toggle appl ications The logic level present at the ‘‘D’’ input is transferred to the Q output during the positive-going transit .

Additional Information:

• Delivery Time: 2-15 DAYS

Product Details:

BNX024H/025H/026H/027H (Block Type EMIFIL forautomotive)is EMI suppression filter supporting large current,wide frequency.

Product Details:

Manufacturing Technology: Discrete DeviceMaterial: Metal-Oxide SemiconductorType: N-type SemiconductorPackage: to-220Application: Power Switching,Converters, Full Bridge ControlModel: Dh066n06

Product Details:

Manufacturing Technology: Discrete DeviceMaterial: Metal-Oxide SemiconductorType: N-type SemiconductorPackage: to-220Application: Power Switching,Converters, Full Bridge Control

Product Details:

Type Designator: 140N10

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 215 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Drain Current |Id|: 140 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 116 nS

Drain-Source Capacitance (Cd): 942 pF

Product Details:

N-channel Enhancement Mode Power MOS FET 1 Description These N-channel Enha nced VDMOSFETsVDSS = 600V RDS(on) （TYP)= 2.1Ω ID = 4A 2 Features

Product Details:

C 7N80 is a N-channel mode power MOSFET usingUTC’s advanced technology to provide customers with planarstripe and DMOS technology. This technology specializes inallowing a minimum on-state resistance and superior switchingperformance. It also can withstand high energy pulse in theavalanche and commutation mode. 

Product Details:

Manufacturing Technology: Discrete DeviceMaterial: Metal-Oxide SemiconductorType: N-type SemiconductorPackage: to-220Application: Power Switching Applications

Product Details:

MUR3040NCS MOSFET are ultrafast dual diodes (trr < 55ns) with soft recovery characteristics. They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction